Irf3710 транзистор характеристики аналог
Наименование прибора: IRF3710
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 57 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 130(max) nC
Время нарастания (tr): 58 ns
Выходная емкость (Cd): 410 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.023 Ohm
IRF3710 Datasheet (PDF)
..1. irf3710.pdf Size:94K _international_rectifier
PD — 91309AIRF3710HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 23mG Fast Switching Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanc
..2. irf3710pbf.pdf Size:218K _international_rectifier
PD — 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
PD — 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
..4. irf3710.pdf Size:274K _first_silicon
SEMICONDUCTORIRF3710TECHNICAL DATAN-Channel Power MOSFET (100V/59A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drain
..5. irf3710.pdf Size:229K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF3710FEATURESDrain Current I =57A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high effciency switch mode power supplies,Power fa
0.1. irf3710z.pdf Size:172K _international_rectifier
PD — 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th
0.2. irf3710s.pdf Size:184K _international_rectifier
PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo
0.3. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier
PD — 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to
0.4. auirf3710zstrl.pdf Size:330K _international_rectifier
PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
0.6. irf3710a.pdf Size:321K _international_rectifier
RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab
PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
PD — 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely
0.10. irf3710z.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.11. irf3710s.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
0.12. irf3710zl.pdf Size:256K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10
0.13. irf3710zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
0.14. irf3710l.pdf Size:256K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
IRF3710PBF аналог IRF450 и HUF75639P3
IRF3710PBF Обзор
The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. . Advanced process technology . Ultra low on-resistance . Dynamic dV/dt rating . Fully avalanche rated . 175°C Operating temperature
HUF75639P3 Обзор
The HUF75639P3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products. . Peak current vs. pulse width curve . UIS Rating curve . Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models
Irf3710 транзистор характеристики аналог
Наименование прибора: IRF3710Z
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 160 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 59 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 82 nC
Время нарастания (tr): 77 ns
Выходная емкость (Cd): 290 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm
IRF3710Z Datasheet (PDF)
..1. irf3710z.pdf Size:172K _international_rectifier
PD — 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th
PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
..4. irf3710z.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.1. auirf3710zstrl.pdf Size:330K _international_rectifier
PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
0.3. irf3710zl.pdf Size:256K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10
0.4. irf3710zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
