Irf3710 транзистор характеристики аналог

Irf3710 транзистор характеристики аналог

Наименование прибора: IRF3710

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 200 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 57 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 130(max) nC

Время нарастания (tr): 58 ns

Выходная емкость (Cd): 410 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.023 Ohm

IRF3710 Datasheet (PDF)

..1. irf3710.pdf Size:94K _international_rectifier

PD — 91309AIRF3710HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 23mG Fast Switching Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanc

..2. irf3710pbf.pdf Size:218K _international_rectifier

PD — 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

PD — 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

..4. irf3710.pdf Size:274K _first_silicon

SEMICONDUCTORIRF3710TECHNICAL DATAN-Channel Power MOSFET (100V/59A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drain

..5. irf3710.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF3710FEATURESDrain Current I =57A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high effciency switch mode power supplies,Power fa

0.1. irf3710z.pdf Size:172K _international_rectifier

PD — 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

0.2. irf3710s.pdf Size:184K _international_rectifier

PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

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0.3. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

PD — 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

0.4. auirf3710zstrl.pdf Size:330K _international_rectifier

PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

0.6. irf3710a.pdf Size:321K _international_rectifier

RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

PD — 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely

0.10. irf3710z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.11. irf3710s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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0.12. irf3710zl.pdf Size:256K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

0.13. irf3710zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

0.14. irf3710l.pdf Size:256K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

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IRF3710PBF аналог IRF450 и HUF75639P3

  • Материал Silicon — Silicon
  • Рабочая Температура -55℃

    IRF3710PBF Обзор

    The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. . Advanced process technology . Ultra low on-resistance . Dynamic dV/dt rating . Fully avalanche rated . 175°C Operating temperature

    HUF75639P3 Обзор

    The HUF75639P3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products. . Peak current vs. pulse width curve . UIS Rating curve . Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models

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    Irf3710 транзистор характеристики аналог

    Наименование прибора: IRF3710Z

    Тип транзистора: MOSFET

    Максимальная рассеиваемая мощность (Pd): 160 W

    Предельно допустимое напряжение сток-исток |Uds|: 100 V

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    Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

    Пороговое напряжение включения |Ugs(th)|: 4 V

    Максимально допустимый постоянный ток стока |Id|: 59 A

    Максимальная температура канала (Tj): 175 °C

    Общий заряд затвора (Qg): 82 nC

    Время нарастания (tr): 77 ns

    Выходная емкость (Cd): 290 pf

    Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm

    IRF3710Z Datasheet (PDF)

    ..1. irf3710z.pdf Size:172K _international_rectifier

    PD — 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

    PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

    PD — 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

    ..4. irf3710z.pdf Size:246K _inchange_semiconductor

    INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

    0.1. auirf3710zstrl.pdf Size:330K _international_rectifier

    PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

    PD — 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

    0.3. irf3710zl.pdf Size:256K _inchange_semiconductor

    Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

    0.4. irf3710zs.pdf Size:258K _inchange_semiconductor

    Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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