A1046 транзистор характеристики распиновка

A1046 транзистор характеристики распиновка

Наименование производителя: 2SA1046

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 15 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 60 MHz

Статический коэффициент передачи тока (hfe): 3500

2SA1046 Datasheet (PDF)

..1. 2sa1046.pdf Size:168K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SA1046DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierDC-DC convertersABSOLUTE MAXIMUM

8.1. 2sa1048 l.pdf Size:237K _toshiba

2SA1048(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Audio Frequency Applications Small package. High voltage: V = -50 V (min) CEO High h h = 70

400 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.), 3dB (m

8.2. 2sa1048.pdf Size:145K _toshiba

8.3. 2sa1049.pdf Size:217K _toshiba

2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Unit: mm Small package. High breakdown voltage: V = -120 V CEO High h h = 200

700 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2459. Maxi

MCCMicro Commercial ComponentsTM2SA1048-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1048-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant («P»Suffix designates PNPCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1

MCCMicro Commercial ComponentsTM2SA1048-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1048-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant («P»Suffix designates PNPCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1

8.6. 2sa1048.pdf Size:423K _secos

2SA1048 -0.15 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92S FEATURES Small Package High Voltage MillimeterREF. Min. Max. Excellent hFE Linearity A 3.90 4.10B 3.05 3.25C 1.42 1.62D 15.1 15.5E 2.97 3.27F 0.66 0.86G 2.44 2.64CLASSIFICATION O

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8.7. 2sa1044.pdf Size:146K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1044 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

8.8. 2sa1041.pdf Size:146K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

8.9. 2sa1043.pdf Size:146K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1043 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

2SA1048 TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage: VCEO=-50V(Min.) High hFE: hFE=70

400 Low noise: NF=1dB(Typ.),10dB(Max.) Complementary to 2SC2458 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in

8.11. 2sa1042.pdf Size:221K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1042DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOComplement to Type 2SC2432Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high voltage switching systems.ABSOLUTE MAXIMUM RATINGS(T =25

8.12. 2sa1044.pdf Size:195K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1044DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -70V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SC2434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierDC-DC converters

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8.13. 2sa1041.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1041DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2431Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high voltage switching systems.ABSOLUTE MAXIMUM RATINGS(T =2

8.14. 2sa1043.pdf Size:194K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1043DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SC2433Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationspower amplifierDC-DC convertersABSOLUTE MAX

8.15. 2sa1040.pdf Size:194K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1040DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2430Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching , high frequency poweramplifer, switching regulator and

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A1046 транзистор характеристики распиновка

Наименование производителя: KTA1046

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 30 MHz

Ёмкость коллекторного перехода (Cc): 45 pf

Статический коэффициент передачи тока (hfe): 100

KTA1046 Datasheet (PDF)

SEMICONDUCTOR KTA1046TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORINDUSTRIAL USE. GENERAL PURPOSE APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3Low Collector Saturation Voltage EC _2.70 0.3+D: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05_E 3.2 0.2+Complementary to KTC2026._F 3.0 0.3+_12.0 0.3G +H 0.5+0

..2. kta1046.pdf Size:1242K _kexin

DIP Type TransistorsPNP TransistorsKTA1046Unit: mmTO-220F0.200.200.202.540.200.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.202.761.47max0.200.500.200.801. Base2.54typ2.54typ 2. Collector3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector —

..3. kta1046.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistors KTA1046DESCRIPTIONLow Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type KTC2026Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose applications .ABSOLUTE

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, «L» Suffix) F 2.30

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SEMICONDUCTOR KTA1049TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTC2028._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, «L» Suffix) F 2.30 + 0.

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

SEMICONDUCTOR KTA1045D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP,MEDIUM SPEED SWITCHING APPLICATIONS A I C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2_B 6.10 + 0.2High breakdown voltage VCEO 120V, high current 1A._C 5.0 + 0.2_D 1.10 + 0.2Low saturation voltage and good linearity of hFE. _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAXC

8.7. kta1049.pdf Size:1290K _kexin

DIP Type TransistorsPNP TransistorsKTA1049Unit: mmTO-220F0.200.200.202.540.200.70 Features Low collector saturation voltage Complementary to KTC20280.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage V

8.8. kta1042d.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistor KTA1042DDESCRIPTIONLow Collector-Emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100

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